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Creators/Authors contains: "Cabanillas, Josep M"

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  1. Adiabatic microrings with opposing p/n contacts achieve full carrier sweepout in reverse bias and energy-efficient carrier injection in forward bias, exhibiting 200GHz/V peak shift in C-band for athermal tuning over a 220 GHz range. 
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  2. We study spontaneous four-wave mixing and spontaneous Raman scattering (SpRS) in a CMOS microring cavity in the C-band and find that the latter contributes a significant fraction to the signal/idler photon flux. We expect operation in the O-band to be less affected by SpRS due to higher confinement of the O-band light in crystalline Si in this device. 
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  3. We demonstrate an efficient silicon waveguide crossing based on the rapid adiabatic coupling (RAC) concept. Insertion loss and crosstalk are under 0.05 dB and -50 dB in simulation and under 0.3 dB and -17 dB in experiment across a 100 nm bandwidth. 
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  4. We experimentally validate the rapid adiabatic coupling (RAC) concept and demonstrate 50±1.4% (3±0.12dB) power splitting over a record 145 nm bandwidth from either port of a 31μm-long, 2×2 coupler, the widest ±1.4%-bandwidth by a factor of 4. 
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  5. We experimentally demonstrate rapid adiabatic coupling (RAC), a novel design concept that harnesses the benefits and addresses the disadvantages of adiabatic photonic structures. The 31μm long 2x2 coupler shows 3±0.3dB splitting over 130nm bandwidth. 
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